8P34S1208 Просмотр технического описания (PDF) - Integrated Device Technology
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8P34S1208 Datasheet PDF : 18 Pages
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IDT8P34S1208I Data Sheet
1:8 LVDS OUTPUT 1.8V FANOUT BUFFER
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC
Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
Item
Supply Voltage, VDD
Inputs, VI
Outputs, IO
Continuous Current
Surge Current
Input Sink/Source, IREF
Maximum Junction Temperature, TJ,MAX
Storage Temperature, TSTG
ESD - Human Body Model, NOTE 1
ESD - Charged Device Model, NOTE 1
Rating
4.6V
-0.5V to VDD + 0.5V
10mA
15mA
±2mA
125°C
-65°C to 150°C
2000V
1500V
NOTE 1: According to JEDEC JS-001-2012/JESD22-C101E.
DC Electrical Characteristics
Table 4A. Power Supply DC Characteristics, VDD = 1.8V ± 5%, TA = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
VDD
Power Supply Voltage
1.71
IDD
Power Supply Current
Q0 to Q7 terminated 100 between nQx, Qx
Typical
1.8
120
Maximum
1.89
140
Units
V
mA
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 1.8V ± 5%, TA = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
VIH
Input High Voltage
VIL
Input Low Voltage
IIH
Input High Current SEL
IIL
Input Low Current SEL
VDD = VIN = 1.89V
VDD = 1.89V, VIN = 0V
VDD * 0.65
-0.3
-10
Typical
Maximum
VDD + 0.3
VDD * 0.35
150
Units
V
V
µA
µA
IDT8P34S1208NBGI REVISION A JANUARY 22, 2014
3
©2014 Integrated Device Technology, Inc.
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