2SK2929 Просмотр технического описания (PDF) - Renesas Electronics

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2SK2929

Silicon N-Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2929

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =0.026 Ω typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB)

G

123

REJ03G1043-0500

(Previous: ADE-208-552C)

Rev.5.00

Sep 07, 2005

D

1. Gate

2. Drain

(Flange)

3. Source

S

Rev.5.00 Sep 07, 2005 page 1 of 7

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