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Компоненты Описание
2SK2085 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2085
Silicon N-Channel MOS FET / 2SK2085
Hitachi -> Renesas Electronics
2SK2085 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
2SK2085
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
Tch
Tstg
Ratings
Unit
100
V
±
20
V
1.0
A
4.0
A
1.0
A
0.9
W
150
°
C
–55 to +150
°
C
2
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