2SD1490
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
70
V
50
V
6
V
1
A
0.75
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 70
—
voltage
Collector to emitter breakdown V(BR)CEO 50
—
voltage
Emitter to base breakdown
V(BR)EBO
6
—
voltage
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
—
DC current transfer ratio
hFE*1
100 —
Collector to emitter saturation VCE(sat)
—
—
voltage
Gain bandwidth product
fT
—
80
Collector output capacitance Cob
—
20
Note: 1. The 2SD1490 is grouped by hFE as follows.
B
C
D
100 to 200 160 to 320 250 to 500
Max Unit Test conditions
—
V
IC = 10 µA, IE = 0
—
V
IC = 1 mA, RBE = ∞
—
V
IE = 10 µA, IC = 0
1
µA
0.2 µA
500
0.3 V
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
VCE = 2 V, IC = 0.1 A
IC = 1 A, IB = 0.1 A
—
MHz VCE = 2 V, IC = 10 mA
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
See characteristic curves of 2SD789.
2