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2SK2957 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание
производитель
2SK2957 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 7mtyp.
4V gate drive devices.
High speed switching
Outline
LDPAK
D
G
S
ADE-208-567D (Z)
5th. Edition
Jun 1998
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain

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