2SK2957L Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SK2957L

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2957(L), 2SK2957(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 7 mΩ typ.

• 4 V gate drive devices.

• High speed switching

Outline

REJ03G1057-0600

(Previous: ADE-208-567D)

Rev.6.00

Sep 07, 2005

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

4

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

D

4

G

1

2

3

123

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.4.00 Sep 07, 2005 page 1 of 7

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