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Компоненты Описание
2SK1160 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK1160
Silicon N-Channel MOS FET / TO-220AB Package
Renesas Electronics
2SK1160 Datasheet PDF : 12 Pages
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2SK1159, 2SK1160
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Drain to source voltage
2SK1159
2SK1160
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
Tch
Tstg
Ratings
Unit
450
V
500
±
30
V
8
A
32
A
8
A
60
W
150
°
C
–55 to +150
°
C
2
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