T2035-600G-TR Просмотр технического описания (PDF) - STMicroelectronics
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T2035-600G-TR Datasheet PDF : 5 Pages
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Fig. 1: Maximum power dissipation versus RMS
on-state current.
P(W)
25
20
15
10
α=60°
α=180°
α=120°
α=90°
5 α=30°
IT(RMS)(A)
0
0
5
10
15
20
Fig. 3: RMS on-state current versus case tem-
perat ure .
T2035-600G
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
P(W)
25
Rth=4°C/W
20
15
Tcase (°C)
Rth=2°C/W Rth=1°C/W
Rth=0°C/W
100
105
110
10
115
5
120
α=180°
Tamb(°C)
0
125
0
20 40 60 80 100 120 140
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
IT(RMS)(A)
22
20
18
16
14
12
10
8
6
4
2
0
0
α=180°
Tcase( °C)
25
50
75
100
125
Fig. 5: Relative variation of gate trigger currentand
holding current versus junction temperature (typi-
cal values).
IGT,IH[Tj]/IGT,IH[Tj=25°C]
2.5
2.0
IGT
1.5
1.0
IH
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140
®
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
200
180
160
140
120
100
80
60
40
20
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10
100
1000
3/5
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