2SB739 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SB739

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB738, 2SB739

10,000

DC Current Transfer Ratio vs.

Collector Current

3,000

1,000

Pulse

VCE = –2V

300

Ta = 75°C

25

100

–25

30

10

–1

–3 –10 –30 –100 –300 –1,000

Collector Current IC (mA)

–3.0

–1.0

–0.3

Saturation Voltage vs.

Collector Current

VBE (sat)

–0.1

–0.03

–0.01

VCE (sat)

Pulse

IC = 10 IB

–0.003

–3

–10 –30 –100 –300 –1,000 –3,000

Collector Current IC (mA)

1,000

300

Collector Output Capacitance

vs. Collector to Base Voltage

f = 1 MHz

IE = 0

100

30

10

–0.1 –0.3

–1.0

–3

–10

Collector to Base Voltage VCB (V)

4

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