RD15HVF1(2006) Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
Номер в каталоге
Компоненты Описание
производитель
RD15HVF1
(Rev.:2006)
(Rev.:2006)
MITSUBISHI ELECTRIC
RD15HVF1 Datasheet PDF : 9 Pages
| |||
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
100 AMBIENT TEMPERATURE
80
60
40
20
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
2
0
0 2 4 6 8 10
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
6
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
4
Vgs=5V
Vgs=4V
2
Vgs=3V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
80
Ta=+25°C
f=1MHz
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
100
80
Ta=+25°C
f=1MHz
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Crss CHARACTERISTICS
10
Ta=+25°C
f=1MHz
8
6
4
2
0
0
5
10
15
20
Vds(V)
RD15HVF1
MITSUBISHI ELECTRIC
3/9
10 Jan 2006
Share Link: