K07N120(2008) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K07N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW07N120

20V

15V

1nF

Ciss

10V

UCE=960V

5V

0V

0nC 20nC 40nC 60nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 8A)

80nC

100pF

Coss

Crss

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

30µs

150A

25µs

20µs

100A

15µs

10µs

50A

5µs

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 1200V, start at Tj = 25°C)

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(100V ≤ VCE ≤ 1200V, TC = 25°C, Tj ≤ 150°C)

Power Semiconductors

8

Rev. 2_2 Sep 08

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