K07N120(2008) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

K07N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW07N120

20A

15A

TJ=150°C

10A

TJ=25°C

5A

0A

0V

1V

2V

3V

4V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

3.0V

2.5V

IF=14A

2.0V

1.5V

IF=7A

IF=3.5A

1.0V

0.5V

0.0V

0°C

40°C

80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as

a function of junction temperature

D=0.5

100K/W

0.2

0.1

0.05

10-1K/W 0.02

0.01

R,(K/W)

0.75885

0.88470

0.85670

τ, (s)

0.09354

0.00543

0.00042

R1

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

Power Semiconductors

10

Rev. 2_2 Sep 08

Share Link: