BFQ17 Просмотр технического описания (PDF) - Philips Electronics
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BFQ17 Datasheet PDF : 6 Pages
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Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFQ17
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. The
transistor has extremely good
intermodulation properties and a high
power gain.
PINNING
PIN
DESCRIPTION
Code: FA
1 emitter
2 collector
3 base
page
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
transition frequency
Cre
feedback capacitance
CONDITIONS
TYP. MAX. UNIT
open emitter
open base
− 40 V
− 25 V
− 300 mA
up to Ts = 145 °C (note 1)
−1
IC = 150 mA; VCE = 15 V; f = 500 MHz; 1.5 −
Tj = 25 °C
IC = 10 mA; VCE = 15 V; f = 1 MHz;
Tamb = 25 °C
1.9 −
W
GHz
pF
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCER
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
RBE ≤ 50 Ω
open base
open collector
f > 1 MHz
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN. MAX. UNIT
−
40
V
−
40
V
−
25
V
−
2
V
−
150 mA
−
300 mA
−
1
W
−65 150 °C
−
175 °C
September 1995
2
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