2SK1572-E Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SK1572-E

Silicon N-Channel MOS FET

Renesas Electronics 

2SK1572

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

600

V

±30

V

3

A

6

A

3

A

25

W

150

°C

–55 to +150

°C

2

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