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30TPS08-M3 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
30TPS08-M3
Vishay
Vishay Semiconductors Vishay
30TPS08-M3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
60
180°
120°
50
90°
60°
30°
40
RMS Limit
30
20
Conduction Angle
10
30TPS.. Series
TJ= 125°C
0
0
5 10 15 20 25 30
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
80
DC
180°
120°
60
90°
60°
30°
40 RMSLimit
Conduction Period
20
30TPS.. Series
TJ= 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
1000
TJ= 25°C
100
280
At Any Rated Load Condition And With
260
Rated V RRMApplied Following Surge.
Initial TJ = 125°C
240
@60 Hz 0.0083 s
@50 Hz 0.0100 s
220
200
180
160
140 30TPS.. Series
120
1
10
100
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
Maximum Non Repetitive Surge Current
280
Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Ma intained.
260
Initial TJ= 125°C
No Voltage Reapplied
240
Rated VRRMReapplied
220
200
180
160
140 30TPS.. Series
120
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
TJ= 125°C
10
30TPS.. Series
1
01234567
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 29-Jul-13
4
Document Number: 94386
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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