2SK1947 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK1947 Datasheet PDF : 10 Pages
| |||
2SK1947
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 100 A/µs
200 VGS = 0, Ta = 25°C
100
50
20
10
5
12
5 10 20 50 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
VDD = 200 V
400
100 V
50 V
VGS
16
300
VDS
200
ID = 50 A 12
8
100
VDD = 200 V
4
100 V
50 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
10000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
1000
Coss
100
Crss
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
500
200
Switching Characteristics
t d(off)
tf
tr
100
t d(on)
50
20
VGS = 10 V, VDD =: 30 V
PW = 2 µs, duty <= 1%
10
0.5 1 2
5 10 20 50
Drain Current ID (A)
6
Share Link: 