D3NK80Z(2003) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

D3NK80Z
(Rev.:2003)

N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt (1) Peak Diode Recovery voltage slope

VISO

Insulation Withstand Voltage (DC)

Tj

Operating Junction Temperature

Tstg

Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 2.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

STP3NK80Z

2.5

1.57

10

70

0.56

-

Value

STF3NK80Z

800

800

± 30

2.5 (*)

1.57 (*)

10 (*)

25

0.2

2

4.5

2500

-55 to 150

STD3NK80Z

STD3NK80Z-1

2.5

1.57

10

70

0.56

-

Unit

V

V

V

A

A

A

W

W/°C

KV

V/ns

V

°C

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220 TO-220FP

1.78

5

62.5

300

DPAK

IPAK

1.78

100

°C/W

°C/W

°C

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

Unit

2.5

A

170

mJ

GATE-SOURCE ZENER DIODE

Symbol

Parameter

Test Conditions

Min.

BVGSO Gate-Source Breakdown Igs= ± 1mA (Open Drain)

30

Voltage

Typ.

Max. Unit

V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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