G03H1202(2008) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

G03H1202
(Rev.:2008)

HighSpeed 2-Technology

Infineon Technologies 

IGP03N120H2

IGW03N120H2

D=0.5

100K/W

0.2

0.1

0.05

10-1K/W

0.02

0.01

10-2K/W

R,(K/W)

1.082517

0.328671

0.588811

τ, (s)

0.000795

0.000179

0.004631

R1

R2

single pulse C1=τ1/R1 C2=τ2/ R2

1µs 10µs 100µs 1ms 10ms 100ms

QGE, GATE CHARGE

Figure 16. IGBT transient thermal resistance

(D = tp / T)

1nF

C

iss

100pF

C

oss

10pF

C

rss

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

20V

15V

U =240V

CE

10V

U =960V

CE

5V

0V

0nC

10nC

20nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 3A)

30nC

1000V

3A

800V

2A

600V

400V

1A

200V

0A

0V

0.0 0.2 0.4 0.6 0.8 1.0 1.2

tp, PULSE WIDTH

Figure 20. Typical turn off behavior, hard

switching

(VGE=15/0V, RG=82Ω, Tj = 150°C,

Dynamic test circuit in Figure E)

Power Semiconductors

8

Rev. 2.6 Febr. 08

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