G03H1202(2008) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

G03H1202
(Rev.:2008)

HighSpeed 2-Technology

Infineon Technologies 

IGP03N120H2

IGW03N120H2

1000ns

100ns

t

d(off)

t

f

10ns

t

d(on)

t

r

1ns

0A

2A

4A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 82Ω,

dynamic test circuit in Fig.E)

1000ns

t

d(off)

100ns

t

f

10ns

t

d(on)

1ns

0Ω

t

r

50Ω

100Ω

150Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 3A,

dynamic test circuit in Fig.E)

1000ns

t

d(off)

100ns

t

f

10ns

t

d(on)

t

r

1ns

25°C 50°C 75°C 100°C 125°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 3A, RG = 82Ω,

dynamic test circuit in Fig.E)

5V

4V

3V

m ax.

typ.

2V

m in.

1V

0V

-50°C

0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.09mA)

Power Semiconductors

6

Rev. 2.6 Febr. 08

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