BF324 Просмотр технического описания (PDF) - Philips Electronics
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BF324 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
Product specification
BF324
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a TO-92; SOT54
plastic package.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage1
2
3
3
2
1
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = −4 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V; f = 100 MHz
MIN.
−
−
−
−
25
−
TYP.
−
−
−
−
−
450
MAX.
−30
−30
−25
300
−
−
UNIT
V
V
mA
mW
MHz
1997 Jul 07
2
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