MPSA13 Просмотр технического описания (PDF) - Fairchild Semiconductor
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MPSA13 Datasheet PDF : 5 Pages
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MPSA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
July 2007
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCES
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
On Characteristics *
IC = 100μA, IB = 0
VCB = 30V, IE = 0
VEB = 10V, IC = 0
hFE
VCE (sat)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE = 5.0V, IC =10mA
VCE = 5.0, IC = 100mA
IC = 100mA, IB = 0.1mA
Min. Max. Units
30
V
100
nA
100
nA
5,000
10,000
1.5
V
VBE (on)
Base-Emitter On Voltage
Small Signal Characteristics
fT
Current Gain Bandwidth Product
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
IC = 100mA,VCE = 5.0V
2.0
V
IC = 10mA, VCE = 10V, f = 100MHz
125
pF
©2007 Fairchild Semiconductor Corporation
1
MPSA13 Rev. A
www.fairchildsemi.com
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