IRFR220 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFR220 Datasheet PDF : 7 Pages
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IRFR220, IRFU220
Typical Performance Curves Unless Otherwise Specified (Continued)
100
OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
10
10µs
100µs
1ms
1
10ms
0.1
1
TJ
TC
=
=
MAX RATED
25oC
DC
SINGLE PULSE
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
VGS = 10V
VGS = 8V
8
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 7V
4
VGS = 6V
2
VGS = 5V
VGS = 4V
0
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
4
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
2
VGS = 4V
VGS = 5V
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 50V
1
TJ = 150oC
TJ = 25oC
0.1
10-2
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
VGS = 10V
3
2
VGS = 20V
1
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4 VGS = 10V, ID = 2.4A
1.8
1.2
0.6
0
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
IRFR220, IRFU220 Rev. B
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