IRFR220 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

IRFR220

4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

Fairchild Semiconductor 

IRFR220, IRFU220

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specfied

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain

TC = 100oC . .

Current

.......

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ID

ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFR220, IRFU220

200

200

4.6

2.9

18

± 20

50

0.4

85

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)

BVDSS ID = 250µA, VGS = 0V, (Figure 10)

200

VGS(TH) VGS = VDS, ID = 250µA

2.0

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC -

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,

4.6

(Figure 7)

Gate to Source Leakage Current

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

Internal Source Inductance

IGSS VGS = ±20V

-

rDS(ON) ID = 2.4A, VGS = 10V, (Figures 8, 9)

-

g fs

VDS ≥ 50V, ID = 2.4A, (Figure 12)

1.7

td(ON) VDD = 100V, ID ≈ 4.6A, RGS = 18Ω, RL = 18Ω,

-

tr

VGS = 10V

-

MOSFET Switching Times are Essentially Indepen-

td(OFF) dent of Operating Temperature

-

tf

-

Qg(TOT) VGS = 10V, ID = 4.6A, VDS = 0.8 x Rated BVDSS, -

Ig(REF) = 1.5mA, (Figure 14)

Qgs

Gate Charge is Essentially Independent of Operat- -

ing Temperature

Q gd

-

CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)

-

COSS

-

C RSS

-

LD

Measured From the Drain Modified MOSFET

-

Lead, 6.0mm (0.25in)

Symbol Showing the

From Package to Center of Internal Device

Die

Inductances

LS

Measured From the

D

-

Source Lead, 6.0mm

LD

(0.25in) From Package to

Source Bonding Pad

G

LS

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

RθJC

R θ JA

Typical Solder Mount

S

-

-

TYP MAX UNITS

-

-

V

-

4.0

V

-

25 µA

- 250 µA

-

-

A

- ±100 nA

0.47 0.800 Ω

2.6

-

S

8.8 13

ns

27 41

ns

21 32

ns

14 21

ns

12 18 nC

2.3 3.4 nC

4.5 6.8 nC

330 -

pF

120 -

pF

41

-

pF

4.5

-

nH

7.5

-

nH

-

2.5 oC/W

-

110 oC/W

©2002 Fairchild Semiconductor Corporation

IRFR220, IRFU220 Rev. B

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