IRFR220 Просмотр технического описания (PDF) - Fairchild Semiconductor

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IRFR220

4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

Fairchild Semiconductor 

Data Sheet

IRFR220, IRFU220

January 2002

4.6A, 200V, 0.800 Ohm, N-Channel Power

MOSFETs

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

Formerly developmental type TA9600.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFR220

TO-252AA

IFR220

IRFU220

TO-251AA

IFU220

NOTE: When ordering, use the entire part number.

Features

• 4.6A, 200V

• rDS(ON) = 0.800Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

GATE

DRAIN

(FLANGE)

DRAIN

SOURCE

©2002 Fairchild Semiconductor Corporation

IRFR220, IRFU220 Rev. B

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