BF245A Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BF245A

N-channel silicon field-effect transistors

NXP Semiconductors. 

NXP Semiconductors

N-channel silicon field-effect transistors

Product specification

BF245A; BF245B; BF245C

103

handbook, halfpage

RDSon

(kΩ)

102

MGE790

10

1

10−1

0

BF245A

BF245B

BF245C

−1

−2

−3

−4

VGS (V)

VDS = 0; f = 1 kHz; Tamb = 25 C.

Fig.20 Drain-source on-state resistance as a

function of gate-source voltage;

typical values.

3

handbook, halfpage

F

(dB)

2

1

MGE786

typ

0

1

10

102

103

f (MHz)

VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C.

Input tuned to minimum noise.

Fig.21 Noise figure as a function of frequency;

typical values.

1996 Jul 30

9

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