2PB709ARL Просмотр технического описания (PDF) - NXP Semiconductors.
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2PB709ARL Datasheet PDF : 9 Pages
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NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tj
Tamb
Tstg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
-
[1] -
-
−55
−65
Max Unit
−45
V
−45
V
−6
V
−100 mA
−200 mA
−100 mA
250
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
Min Typ Max Unit
[1] -
-
500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = −45 V; IE = 0 A
current
VCB = −45 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = −5 V; IC = 0 A
current
-
-
−10 nA
-
-
−5 µA
-
-
−10 nA
hFE
DC current gain
VCE = −10 V; IC = −2 mA
hFE group R
210 -
340
VCEsat
hFE group S
collector-emitter
saturation voltage
IC = −100 mA;
IB = −10 mA
290 -
[1] -
-
460
−500 mV
2PB709AXL_1
Product data sheet
Rev. 01 — 12 November 2008
© NXP B.V. 2008. All rights reserved.
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