NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
300
(1)
hFE
200
(2)
100
(3)
006aaa119
600
hFE
(1)
400
(2)
200
(3)
006aaa120
0
−10−1
−1
−10
−102
−103
IC (mA)
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. Selection -16: DC current gain as a function of
collector current; typical values
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 2. Selection -25: DC current gain as a function of
collector current; typical values
800
hFE
600
(1)
006aaa121
400
(2)
200
(3)
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Selection -40: DC current gain as a function of collector current; typical values
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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