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204S8E Просмотр технического описания (PDF) - NXP Semiconductors.

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204S8E
NXP
NXP Semiconductors. NXP
204S8E Datasheet PDF : 14 Pages
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NXP Semiconductors
BTA204S-800E
3Q Hi-Com Triac
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
-
-
10 mA
-
-
10 mA
-
-
10 mA
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
main terminal 1
T2
main terminal 2
G
gate
T2
mounting base; main terminal 2
3. Ordering information
Simplified outline
mb
2
1
3
SOT428 (DPAK)
Graphic symbol
T2
T1
G
sym051
Table 3. Ordering information
Type number
Package
Name
BTA204S-800E
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BTA204S-800E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 May 2011
© NXP B.V. 2011. All rights reserved.
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