PUMB16 Просмотр технического описания (PDF) - NXP Semiconductors.
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PUMB16 Datasheet PDF : 9 Pages
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NXP Semiconductors
PEMB16; PUMB16
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
103
hFE
102
10
006aaa198
(1)
(2)
(3)
−103
VCEsat
(mV)
−102
(1)
(2)
(3)
006aaa199
1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−104
006aaa200
VI(on)
(mV)
(1)
(2)
−103
(3)
−10
−10−1
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−104
006aaa201
VI(off)
(mV)
−103
(1)
(2)
(3)
−102
−10−1
−1
−10
−102
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
−102
−10−2
−10−1
−1
−10
IC (mA)
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PEMB16_PUMB16_3
Product data sheet
Rev. 03 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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