IRFS630B Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFS630B Datasheet PDF : 10 Pages
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Typical Characteristics
V
Top : 15.0GSV
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.5
2.0
VGS = 10V
1.5
V = 20V
GS
1.0
0.5
※ Note : TJ = 25℃
0.0
0
5
10
15
20
25
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
1000
500
Ciss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 40V
DS
10
VDS = 100V
VDS = 160V
8
6
4
2
※ Note : I = 9.0 A
D
0
0
4
8
12
16
20
24
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, December 2002
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