11N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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11N60 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
* Notes :
1. 250 µs Pulse Test
2. TC = 25oC
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.8
VGS = 10V
0.6
0.4
VGS = 20V
0.2
0.0
0
* Note : TJ = 25oC
5
10
15
20
25
30
35
40
ID, Drain Current [A]
Figure 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
* Note
1. VDS = 40V
2. 250 µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150 oC
25 oC
* Notes :
1. V = 0V
GS
2. 250 µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
6000
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
2000
1000
0
10-1
C
oss
Ciss
Crss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 11A
0
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
FCB11N60 Rev. A1
3
www.fairchildsemi.com
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