BDY54(Old_V) Просмотр технического описания (PDF) - Comset Semiconductors
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Компоненты Описание
производитель
BDY54 Datasheet PDF : 3 Pages
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BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
IC=100 mA, IB=0
BDY53
BDY54
IEBO
Emitter-Base Cutoff Current VEB=7 V
BDY53
BDY54
ICEX
VCE(SAT)
VBE(SAT)
h21E
Collector-Emitter Cutoff
Current
VCE=100 V
VBE=-1.5 V
TCASE=150°C
VCE=150 V
VBE=-1.5 V
TCASE=150°C
Collector-Emitter saturation
Voltage (*)
IC=4.0 A, IB=0.4 A
IC=7.0 A, IB=1.4 A
Base-Emitter Voltage (*)
IC=4.0 A, IB=0.4 A
IC=7.0 A, IB=1.4 A
Static Forward Current
transfer ratio (*)
VCE=1.5 V, IC=2 A
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
fT
Transition Frequency
VCE=4.0 V, IC=0.5 A, f=10 BDY53
MHz
BDY54
Min Typ Mx Unit
60 -
120 -
-
-
V
- - 3.0 mA
--
15 mA
--
- - 1.1
V
- - 2.2
- -2
V
- - 2.5
20 - 60 V
20 - - MHz
td + tr
Turn-on time
IC=5 A, IB=1 A
ts + tf
Turn-off time
IC=5 A,
IB1=1 A,
IB2=-0.5 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BDY53
BDY54
BDY53
BDY54
- 0.3 - µs
- 1.8 - µs
COMSET SEMICONDUCTORS
2/3
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