G04N60P Просмотр технического описания (PDF) - Infineon Technologies

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G04N60P

Fast IGBT in NPT-technology

Infineon Technologies 

SGP04N60

SGD04N60

Fast IGBT in NPT-technology

• 75% lower Eoff compared to previous generation

combined with low conduction losses

C

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

G

E

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC2 for target applications

PG-TO-252-3-1 (D-PAK) PG-TO-220-3-1

(TO-252AA)

(TO-220AB)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

SGP04N60

SGD04N60

VCE

600V

600V

IC

VCE(sat)150°C

Tj

Marking

Package

4A

2.3V

150°C G04N60 PG-TO-220-3-1

4A

2.3V

150°C G04N60 PG-TO-252-3-11

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 4 A, VCC = 50 V, RGE = 25 Ω ,

start at Tj = 25°C

Short circuit withstand time1)

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Soldering temperature,

PG-TO-252: (reflow soldering, MSL3)

Others: wavesoldering, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

Ts

Value

600

9.4

4.9

19

19

±20

25

10

50

-55...+150

260

260

Unit

V

A

V

mJ

µs

W

°C

2 J-STD-020 and JESD-022

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.2 Sep 07

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