K75T60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K75T60
(Rev.:2006)

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW75N60T

q

D=0.5

10-1K/W

0.2

0.1

0.05

10-2K/W

R,(K/W)

0.1968

0.0733

0.0509

0.02 0.0290

0.01 R1

τ, (s)

0.115504

0.009340

0.000823

0.000119

R2

C1=τ1/R1 C2=τ2/R2

10-3K/W

1µs

single pulse

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

D=0.5

0.2

1 0 -1K /W

0.1

0.05

1 0 -2K /W

0.02

0.01

R,(K/W)

0.1846

0.1681

0.1261

0.0818

0.04

R1

τ, (s)

0.110373

0.015543

0.001239

0.000120

0.000008

R2

single pulse

C1=τ1/R1 C2=τ2/R2

100ns 1µs 10µs 100µs 1ms 10ms100ms

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

200ns

150ns

100ns

50ns

5µC

TJ=175°C

4µC

3µC

TJ=25°C

2µC

1µC

TJ=175°C

TJ=25°C

0ns

1000A/µs

1500A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=75A,

Dynamic test circuit in Figure E)

0µC

1000A/µs

1500A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 75A,

Dynamic test circuit in Figure E)

Power Semiconductors

9

Rev. 2.4 May 06

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