K75T60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K75T60
(Rev.:2006)

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW75N60T

q

15V

120V

10V

480V

5V

0V0nC 100nC 200nC 300nC 400nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=75 A)

C iss

1nF

100pF

C oss

C rss

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

1000A

750A

500A

250A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 400V, Tj ≤ 150°C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C,

TJmax<150°C)

Power Semiconductors

8

Rev. 2.4 May 06

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