K75T60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K75T60
(Rev.:2006)

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW75N60T

q

t d(off)

100ns

tf

td(on)

10ns

0A

tr

40A

80A

120A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, RG = 5Ω,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

tr

td(on)

10ns

5Ω

10Ω

15Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 75A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

tr

td(on)

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 10A, RG=5Ω,

Dynamic test circuit in Figure E)

7V

6V

max.

typ.

5V

4V min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 1.2mA)

Power Semiconductors

6

Rev. 2.4 May 06

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