ZXM61P02FTA_13 Просмотр технического описания (PDF) - Diodes Incorporated.
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ZXM61P02FTA_13 Datasheet PDF : 7 Pages
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ZXM61P02F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
-20
IDSS
IGSS
VGS(th)
-0.7
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
gfs
VSD
trr
Qrr
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
0.56
14.9
5.6
150
70
30
2.9
6.7
11.2
10.1
3.5
0.5
1.5
Notes:
8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
Max
-0.1
±100
-1.5
0.6
0.9
-0.95
Unit
Test Condition
V
ID = -250μA, VGS = 0V
μA VDS = -20V, VGS = 0V
nA VGS = 12V, VDS = 0V
V
ID = -250A, VDS = VGS
Ω
VGS = -4.5V, ID = -0.61A
VGS = -2.7V, ID = -0.31A
S
VDS = -10V, ID = -0.31A
V
TJ = +25°C, IS = -0.61A, VGS = 0V
ns TJ = +25°C, IF = -0.61A,
nC di/dt = 100A/μs
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
ns
VDD = -110V, ID = -0.93A,
RG 6.2Ω RD 11Ω
nC
VDS = -16V, VGS = -4.5V,
ID = -0.61A
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
3 of 7
www.diodes.com
October 2013
© Diodes Incorporated
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