WFSA6503 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFSA6503 Datasheet PDF : 9 Pages
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WFSA6503
N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(ON)
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=250uA, VGS=0V
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
VDS= VGS, ID=250uA
ID=6.9A, VGS=10V
ID=5A, VGS=4.5V
VDS=15V,
VGS=0V,
f=1MHz
VGS=10V,
VDS=15V,
RL=2.2Ω,
RGEN=3Ω
VDS=15V,
VGS=10V,
ID=6.9A
IS=1A, VGS=0V
Ratings
min typ max
30
-
-
-
-
1
-
- +100
1.0 1.6 2.0
-
17
25
-
24
40
-
680 820
-
102
-
-
77
-
-
4.6
7
-
4.1
6
- 20.6 30
-
5.2
8
- 6.74 8.1
-
1.82
-
-
3.2
-
- 0.76 1.3
Unit
V
uA
nA
V
mΩ
mΩ
pF
nS
nC
V
2/10
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