GS82032AT Просмотр технического описания (PDF) - Giga Semiconductor

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GS82032AT

64K x 32 2Mb Synchronous Burst SRAM 180 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O

Giga Semiconductor 

GS82032AT-180/166/150/133/100/66/4/5/6

Byte Write Truth Table

Function

GW

BW

BA

BB

BC

BD

Notes

Read

H

H

X

X

X

X

1

Read

H

L

H

H

H

H

1

Write byte A

H

L

L

H

H

H

2, 3

Write byte B

H

L

H

L

H

H

2, 3

Write byte C

H

L

H

H

L

H

2, 3, 4

Write byte D

H

L

H

H

H

L

2, 3, 4

Write all bytes

H

L

L

L

L

L

2, 3, 4

Write all bytes

L

X

X

X

X

X

Notes:

1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.

2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.

3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.

Rev: 1.12 10/2004

6/22

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2000, GSI Technology

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