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TZA3026 Просмотр технического описания (PDF) - NXP Semiconductors.

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TZA3026 Datasheet PDF : 15 Pages
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Philips Semiconductors
TZA3026
SDH/SONET STM4/OC12 transimpedance amplifier
8. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCC
supply voltage
0.5
Vn
pad DC voltage
pad
IPHOTO
0.5
OUT, OUTQ
0.5
AGC, IDREF_MON
0.5
DREF
0.5
In
pad DC current
pad
IPHOTO
4.0
OUT, OUTQ
10
AGC, IDREF_MON
0.2
DREF
4.0
Ptot
total power dissipation
-
Tamb ambient temperature
40
Tj
junction temperature
-
Tstg
storage temperature
65
Max
Unit
+3.8
V
+2.0
V
VCC + 0.5 V
VCC + 0.5 V
VCC + 0.5 V
+4.0
mA
+10
mA
+0.2
mA
+4.0
mA
300
mW
+85
°C
150
°C
+150
°C
9. Characteristics
Table 4: Characteristics
Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
VCC
ICC
Ptot
Tj
Tamb
Rtr
supply voltage
supply current
total power dissipation
junction temperature
ambient temperature
small-signal
transresistance of the
receiver
AC-coupled; RL(dif) = 100 ;
excluding IDREF and IIDREF_MON
measured differentially;
AC-coupled, RL(dif) = 100
2.9 3.3
-
18
-
60
40 -
40 +25
9.5 14
3.6
V
21
mA
76
mW
+125
°C
+85
°C
19
k
f-3dB(h)
In(tot)(rms)
high frequency 3 dB point CPD = 0.7 pF; VCC = 3.3 V
440 650
-
total integrated RMS noise referenced to input;
[1] -
67
79
current over bandwidth
CPD = 0.7 pF; fi = 450 MHz
third-order Bessel filter
MHz
nA
Automatic gain control loop: pad AGC
tatt
tdecay
VO(data)(p-p)
attack time
decay time
data output voltage
(peak-to-peak value)
AGC pad unconnected
AGC pad unconnected
referenced to output;
measured differentially
-
14
-
µs
-
40
-
µs
-
125
-
mV
9397 750 14763
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
8 of 15

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