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TZA3026

SDH/SONET STM4/OC12 transimpedance amplifier

NXP Semiconductors. 

Philips Semiconductors

6. Pinning information

6.1 Pinning

TZA3026

SDH/SONET STM4/OC12 transimpedance amplifier

3

2

1

VCC

4

IDREF_MON 5

17 VCC

16 IDREF_MON

AGC 6

OUTQ 7

TZA3026

15 AGC

14 OUT

OUT 8

13 OUTQ

GND 9

12 GND

GND 10

11 GND

Fig 2. Pad configuration

001aac618

6.2 Pin description

Table 2: Bonding pad description

Bonding pad locations with respect to the center of the die (see Figure 10), X and Y are in µm.

Symbol

Pad X

Y

Type

Description

DREF

1 −493.6 140 output

bias voltage output for PIN diode; connect cathode of PIN diode to

pad 1 or pad 3

IPHOTO

2 −493.6 0

input

current input; anode of PIN diode should be connected to this pad

DREF

3 −493.6 −140 output

bias voltage output for PIN diode; connect cathode of PIN diode to

pad 1 or pad 3

VCC

4

IDREF_MON 5

−353.6 −278.6 supply

−213.6 −278.6 output

supply voltage; connect supply voltage to pad 4 or pad 17

current output for RSSI measurements; connect a resistor to pad 5

or pad 16 and ground

AGC

6 −73.6 −278.6 input

AGC voltage; use pad 6 or pad 15

OUTQ

7 66.4 −278.6 output

data output; complement of pad OUT; use pad 7 or pad 13

OUT

8 206.4 −278.6 output

data output; use pad 8 or pad 14 [1]

GND

9 346.4 −278.6 ground

ground; connect together pads 9, 10, 11 and pad 12 as many as

possible

GND

10 486.4 −278.6 ground

ground; connect together pads 9, 10, 11 and pad 12 as many as

possible

9397 750 14763

Product data sheet

Rev. 01 — 2 May 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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