MP03XXX360 Просмотр технического описания (PDF) - Dynex Semiconductor

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MP03XXX360

Dual Thyristor, Thyristor/Diode Module

Dynex Semiconductor 

MP03XXX360

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

Parameter

Test Conditions

Max. Units

IT(AV)

IT(RMS

ITSM

I2t

ITSM

I2t

Visol

Mean on-state current

Half wave resistive load

Tcase = 75˚C

355

A

Tcase = 85˚C

312

A

Theatsink = 75˚C 276

A

Theatsink = 85˚C 242

A

RMS value

T = 75˚C

case

560 A

Surge (non-repetitive) on-current

10ms half sine, Tj = 130˚C

8.1 kA

I2t for fusing

VR = 0

0.33x106 A2s

Surge (non-repetitive) on-current

10ms half sine, Tj = 130˚C

6.5 kA

I2t for fusing

V = 50% V

R

DRM

0.21x106 A2s

Isolation voltage

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

3000 V

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

(per thyristor or diode)

Rth(c-hs)

Tvj

Tstg

-

Thermal resistance - case to heatsink

(per thyristor or diode)

Virtual junction temperature

Storage temperature range

Screw torque

-

Weight (nominal)

Test Conditions

dc

Half wave

3 Phase

Mounting torque = 5Nm

with mounting compound

Reverse (blocking)

-

Mounting - M5

Electrical connections - M8

-

Min. Max. Units

- 0.105 ˚C/kW

- 0.115 ˚C/kW

-

0.12 ˚C/kW

-

0.05 ˚C/kW

-

135

˚C

–40 135

˚C

-

5(44) Nm (lb.ins)

-

9(80) Nm (lb.ins)

-

950

g

2/9

www.dynexsemi.com

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