TG40E80 Просмотр технического описания (PDF) - SanRex Corporation
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TG40E80 Datasheet PDF : 2 Pages
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SanRex®
TRIAC for High Power
< Electrical Characteristics >
Symbol
Item
I DRM
VTM
I GT1+
I GT1-
I GT3+
I GT3-
VG T1+
VG T1-
VG T3+
VG T3-
VG D
dv/dt
(dv/dt)c
IH
Rth(j-c)
Repetitive Peak Off-state Current
Peak On-State Voltage
QI
QII
QIV
Gate Trigger Current
QIII
QI
QII
QIV
Gate Trigger Voltage
QIII
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Rise of
Commutation Voltage
Holding Current
Thermal Resistance
Conditions
Tj = 125°C, VD = VDRM,
I T =60A, Instant measurement
VD = 6V, I T =1A
VD = 6V, I T =1A
Tj = 125oC, VD=1/2VDRM
Tj = 125oC, VD=1/2VDRM ,
Exponential wave
Tj =125oC, VD=2/3VDRM,
(di/dt)c= 10 A/ms
Junction to case
TG40E80
(Tj= 25°C unless otherwise noted)
Ratings
Min. Typ. Max.
Unit
5
mA
1.4
V
50
mA
50
mA
-
mA
50
mA
1.5
V
1.5
V
-
V
1.5
V
0.2
V
500
V/Fs
6
30
1.3
V/Fs
mA
°C/W
* Dimensions in millimeters
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SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 Web : www.sanrex.com
June 2006 – 3rd ed.
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