STD2NK90ZT4(2004) Просмотр технического описания (PDF) - STMicroelectronics
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Компоненты Описание
производитель
STD2NK90ZT4
(Rev.:2004)
(Rev.:2004)
STMicroelectronics
STD2NK90ZT4 Datasheet PDF : 13 Pages
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STP2NK90Z - STD2NK90Z - STD2NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source Breakdown ID = 1 mA, VGS = 0
900
V
Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 1.05 A
5
6.5
Ω
Table 8: Dynamic
Symbol
Parameter
Test Conditions
gfs (1) Forward Transconductance VDS = 15 V , ID = 1.05 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
COSS eq (3). Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 720 V
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 450 V, ID = 1 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 720 V, ID = 2 A,
VGS = 10 V
(see Figure 22)
Min.
Typ.
2.3
485
50
10
24
21
11
43
40
19.5
3.4
10.8
Max. Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
27
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.1
A
8.4
A
VSD (1) Forward On Voltage
ISD = 2.1 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V
(see Figure 20)
415
ns
1.5
µC
7.2
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V, Tj = 150°C
(see Figure 20)
515
ns
1.9
µC
7.5
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/13
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