STD2NK90Z(2004) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STD2NK90Z
(Rev.:2004)

N-CHANNEL 900V - 5Ω - 2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESH™ MOSFET

STMicroelectronics 

STP2NK90Z - STD2NK90Z - STD2NK90Z-1

Table 3: Absolute Maximum ratings

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt (1) Peak Diode Recovery voltage slope

Tj

Operating Junction Temperature

Tstg

Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤2.1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Value

STP2NK90Z

STD2NK90Z

STD2NK90Z-1

900

900

± 30

2.1

1.3

8.4

70

0.56

2000

4.5

-55 to 150

-55 to 150

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max

1.78

Rthj-amb Thermal Resistance Junction-ambient Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

Unit

V

V

V

A

A

A

W

W/°C

V

V/ns

°C

°C

°C/W

°C/W

°C

Table 5: Avalanche Characteristics

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

2.1

150

Unit

A

mJ

Table 6: Gate-Source Zener Diode

Symbol

Parameter

BVGSO

Gate-Source Breakdown

Voltage

Test Conditions

Igs=± 1mA (Open Drain)

Min. Typ. Max. Unit

30

V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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