02N60C3(2005) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

02N60C3
(Rev.:2005)

Cool MOS™ Power Transistor

Infineon Technologies 

63S1&

(OHFWULFDO&KDUDFWHULVWLFVDWTj ƒ&XQOHVVRWKHUZLVHVSHFLILHG

3DUDPHWHU

6\PERO

&RQGLWLRQV

PLQ

Transconductance

gfs

VDS≥,'5'6RQPD[



,' $

Input capacitance

Ciss

VGS 9VDS 9



Output capacitance

Coss

f 0+]



Reverse transfer capacitance Crss



(IIHFWLYHRXWSXWFDSDFLWDQFH &RHU VGS 9



HQHUJ\UHODWHG

VDS 9WR9

(IIHFWLYHRXWSXWFDSDFLWDQFH &RWU



WLPHUHODWHG

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td(on)

tr

td(off)

tf

VDD 9VGS 9 

,' $RG Ω







9DOXHV

W\S





















PD[





















8QLW

6

S)

S)

QV

*DWH&KDUJH&KDUDFWHULVWLFV

Gate to source charge

Qgs

VDD 9,' $

Gate to drain charge

*DWHFKDUJHWRWDO

Qgd

4J

VDD 9,' $

VGS WR9

*DWHSODWHDXYROWDJH

9SODWHDX VDD 9,' $





 Q&









 





9

5HSHWLWYHDYDODQFKHFDXVHVDGGLWLRQDOSRZHUORVVHVWKDWFDQEHFDOFXODWHGDV3$9 EARf

'HYLFHRQPPPPPPHSR[\3&%)5ZLWKFPðRQHOD\HU—PWKLFNFRSSHUDUHDIRUGUDLQ

FRQQHFWLRQ3&%LVYHUWLFDOZLWKRXWEORZQDLU

&RHULVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHVWRUHGHQHUJ\DVCossZKLOHVDSLVULVLQJIURPWR9'66

&RWULVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHFKDUJLQJWLPHDVCossZKLOHVDSLVULVLQJIURPWR9'66

5ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

Rev. 2.0

PDJH

5-10-24

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