SI3850ADV-T1-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

SI3850ADV-T1-E3

Complementary MOSFET Half-Bridge (N- and P-Channel)

Vishay Semiconductors 

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

3.0

TJ = 150 °C

2.4

1

1.8

25 °C

0.1

1.2

0.01

0.6

Si3850ADV

Vishay Siliconix

125 °C

25 °C

0.001

0.0

0.4

0.8

1.2

1.6

2.0

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.4

0.3

ID = 250 µA

0.2

0.1

ID = 5 mA

0.0

- 0.1

- 0.2

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

0.0

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

30

24

18

12

6

0

0.001

0.01

0.1

1

10

Time (s)

Single Pulse Power vs. Junction-to-Ambient

Limited by RDS(on)*

1

1 ms

10 ms

0.1

TA = 25 °C

Single Pulse

100 ms

1 s, 10 s

DC

BVDSS Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

Document Number: 73789

S09-2110-Rev. B, 12-Oct-09

www.vishay.com

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