SI3850ADV-T1-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3850ADV-T1-E3 Datasheet PDF : 13 Pages
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Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
2.0
VGS = 5 V thru 4 V
- 55 °C
2.0
1.6
3.5 V
25 °C
TC = 125 °C
1.5
1.2
3V
1.0
0.8
2.5 V
0.5
0.4
2V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
2.0
VGS = 2.5 V
1.5
1.0
0.5
VGS = 3 V
VGS = 4.5 V
110
Ciss
88
66
Coss
44
22
Crss
0.0
0.0
0.5
1.0
1.5
2.0
2.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 1 A
8
6
VDS = 5 V
VDS = 10 V
VGS = 15 V
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
Qg - Total Gate Charge (nC)
Gate Charge
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 0.5 A
1.6
VGS = 3 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
6
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
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