SI3850ADV-T1-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3850ADV-T1-E3 Datasheet PDF : 13 Pages
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Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.5
VGS = 5.0 V thru 4 V
3.0
3V
2.5
2.0
2.5 V
1.5
1.0
0.5
2V
0.0
0.0
0.7
1.4
2.1
2.8
3.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
2.4
1.8
1.2
0.6
0.0
0
- 55 °C
25 °C
TC = 125 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.7
110
0.6
VGS = 2.5 V
0.5
VGS = 3 V
0.4
0.3
VGS = 4.5 V
0.2
0.1
88
Ciss
66
Coss
44
22
Crss
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 1 A
8
VDS = 5 V
6
VDS = 10 V
4
VGS = 15 V
2
1.8
ID = 1.2 A
1.6
1.4
1.2
1.0
0.8
VGS = 3 V
VGS = 4.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
3
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