SI3850ADV-T1-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3850ADV-T1-E3 Datasheet PDF : 13 Pages
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Si3850ADV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
20
0.300 at VGS = 4.5 V
0.410 at VGS = 3.0 V
P-Channel
- 20
0.640 at VGS = - 4.5 V
0.980 at VGS = - 3.0 V
ID (A)
1.4
1.2
- 0.96
- 0.78
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
S1
D
2
5
D
G2
3
4
S2
Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)
Si3850ADV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
ID
1.4
1.1
- 0.96
- 0.77
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM
3.5
IS
0.9
- 2.0
- 0.9
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
TA = 25 °C
TA = 70 °C
PD
1.08
0.70
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, ± ≤ 10 s)
Note:
Maximum under Steady State condition is 150 °C/W.
Symbol
RthJA
N- or P-Channel
115
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
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